2025/11/05 by Arun Kumar Yadav, S. Muhuri, Yadav, Arun Kumar +17
Engineering · Physics and Astronomy · #FOS: Physical sciences #Instrumentation and Detectors (physics.ins-det) #Particle Detector Development and Performance #Radiation Detection and Scintillator Technologies #Radiation Effects in Electronics
paper · pdf · doi:10.48550/arxiv.2511.03573
openalex publication_date 2025/11/05 · openalex created_date 2025/11/07 · openalex updated_date 2026/07/28
We report on the radiation tolerance characterisation of a p-type silicon pad sensor indigenously designed by BARC-VECC and fabricated at Bharat Electronics Limited (BEL), India -- representing a significant step toward establishing a domestic silicon sensor manufacturing capability for high-energy physics applications. Single-pad test structures were irradiated with neutrons over a range of fluences from ∼107 to ∼2.5×1014~1~MeV~neq/cm2, spanning the operational regime relevant to forward calorimetry in high-luminosity heavy-ion collider experiments. Post-irradiation performance was characterised through systematic measurement of leakage current evolution and calorimetric response as functions of accumulated neutron fluence. A single-exponential annealing model is introduced to describe the time dependence of leakage current within the observation window, and the current-related damage constant α is extracted and compared with the RD48 reference value. The results demonstrate that the sensors survive the target fluence with measurable but recoverable degradation, validating the fabrication process and providing a baseline for future qualification of this indigenous sensor production chain.