Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

2017/10/11 by Benjamin Nachman, Nachman, Benjamin · 2 citations
Physics and Astronomy · #FOS: Physical sciences #High Energy Physics - Experiment (hep-ex) #Instrumentation and Detectors (physics.ins-det) #Particle Detector Development and Performance #Particle physics theoretical and experimental studies #Radiation Detection and Scintillator Technologies

paper · doi:10.48550/arxiv.1710.03916

openalex publication_date 2017/10/11 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Silicon pixel detectors are at the core of the current ATLAS detector and its planned upgrade. As the detectors in closest proximity to the interaction point, they will be exposed to a significant amount of radiation: prior to the HL-LHC, the innermost layers will receive a fluence in excess of 10¹⁵ 1 MeV n_eq/cm² and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This talk presents a digitization model that includes radiation damage effects to the ATLAS Pixel sensors for the first time. After a thorough description of the setup, predictions for basic pixel cluster properties are presented alongside first validation studies with Run 2 collision data.

Cited by

• Radiation Tolerance Characterisation of an Indigenously Developed p-type Silicon Pad Sensor for Forward Calorimetry Applications
• Simulation of irradiated hybrid planar pixels modules at fluences expected at HL-LHC

Related

• The ATLAS Pixel Project
• Characterization of Novel Thin N-in-P Planar Pixel Modules for the ATLAS Inner Tracker Upgrade
• A look-up table algorithm to model radiation damage effects in Monte Carlo events for HL-LHC experiments
• Radiation Hard 3D Silicon Pixel Sensors for use in the ATLAS Detector at the HL-LHC
• Measurements and TCAD simulation of novel ATLAS planar pixel detector structures for the HL-LHC upgrade