2003/04/22 by U Neuh usler, U Neuh usler, Gerd Schneider +9 · 3 citations
Physics and Astronomy · Engineering · Materials Science · #Advanced X-ray Imaging Techniques #Integrated Circuits and Semiconductor Failure Analysis #Electron and X-Ray Spectroscopy Techniques
paper · doi:10.1088/0022-3727/36/10a/316
We report on x-ray microscopy of advanced microelectronic devices imaged in Zernike-type phase contrast mode at 4 keV photon energy. Fresnel zone plates were used as high resolution x-ray objectives providing 60 nm spatial resolution. Integrated circuit copper interconnect structures were imaged in positive as well as negative phase contrast. In both cases the phase contrast in the x-ray images is about five times higher than the pure absorption contrast.