2025/09/16 by Samuel D. Escribano, Escribano, Samuel D., A. Levy Yeyati +3
Engineering · Materials Science · #Chalcogenide Semiconductor Thin Films #Copper-based nanomaterials and applications #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #ZnO doping and properties
paper · pdf · doi:10.48550/arxiv.2509.13246
openalex publication_date 2025/09/16 · openalex created_date 2025/10/18 · openalex updated_date 2026/07/28
Strain provides a powerful knob to tailor the electronic properties of semiconductors. Simple yet accurate approximations that capture strain effects in demanding simulations of mesoscopic nanostructures are therefore highly desirable. However, for III-V compounds, key materials for quantum applications, such approaches remain comparatively underdeveloped. In this work, we derive a compact, effective Hamiltonian that describes the conduction band of zincblende III-V semiconductors incorporating strain effects. Starting from the eight-band k⋅p model with Bir-Pikus corrections, we perform a folding-down procedure to obtain analytical expressions for conduction-band strain-renormalized parameters, including the effective mass, chemical potential, spin-orbit coupling, and g-factor. The model reproduces full multiband results under small to moderate strain, while retaining a form suitable for device-scale calculations. We benchmark the model for bulk deformations and apply it to representative nanostructures, such as core.shell nanowires and planar heterostructures. Our results provide a practical and versatile tool for incorporating strain into the design of III-V semiconductor devices, enabling reliable predictions of their properties with direct implications for spintronic, straintronic, optoelectronic, and topological quantum technologies.