Gated-Channel Conductivity Modulation by Hole Storage Effect Under Pulsed Conditions in p-GaN Gate Double Channel HEMT

2024/12/18 by Hang Liao, Liao, Hang, Zheyang Zheng +5
Engineering · Physics and Astronomy · #Applied Physics (physics.app-ph) #FOS: Physical sciences #GaN-based semiconductor devices and materials #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices

paper · pdf · doi:10.48550/arxiv.2412.14279

openalex publication_date 2024/12/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Recently, a p-GaN gate double channel HEMT (DC-HEMT) with conductivity modulation has been reported. The conductivity modulation is realized by hole storage in the gate stack and observed under quasi-static measurements. In this work, pulsed measurement and transient simulations of the DC-HEMT are carried out to disclose the conductivity modulation at high frequency and build-up time of hole storage. It takes 150 ns for the hole storage to be completely established despite a Schottky gate in the DC-HEMT with low gate leakage. The fast build-up of hole storage is attributed to the AlN insertion layer's strong confinement capability of holes and suppressed electron-hole recombination in the DC structure.

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