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Threshold photodetachment ofAl−:Electron affinity and fine structure

1998/03/01 by M. Scheer, R. C. Bilodeau, Jan Thøgersen +1 · 7 citations
Physics and Astronomy · Chemistry · #Advanced Chemical Physics Studies #Atomic and Molecular Physics #Mass Spectrometry Techniques and Applications #Physics #Electron affinity (data page) #Ionic bonding #Electron #Atomic physics #Ground state #Crystallography #Ion #Quantum mechanics #Chemistry #Molecule

paper · doi:10.1103/physreva.57.r1493

openalex publication_date 1998/03/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Tunable infrared laser spectroscopy of Al^\ensuremath-(3p23PJ) has yielded an improved value for the electron affinity of aluminum and experimental data on the previously unobserved fine structure of the ionic ground state. The electron affinity is determined to be 3491.0(4)cm^\mathrm\ensuremath-1 [432.83(5) meV], and the J=0\ensuremath-1 and J=1\ensuremath-2 splittings are found to be 22.7(3) and 45.7(2)cm^\mathrm\ensuremath-1, respectively. The result for the electron affinity is in substantial disagreement with a very recent experimental investigation. Our work also indicates that isoelectronic extrapolations for the ionic fine structure were accurate within uncertainties, and is in good agreement with recent calculations of the electron affinity.

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