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Negative Ion of Boron: An Experimental Study of the3PGround State

1998/03/23 by M. Scheer, R. C. Bilodeau, H. K. Haugen · 6 citations
Physics and Astronomy · Chemistry · #Atomic and Molecular Physics #Advanced Chemical Physics Studies #X-ray Spectroscopy and Fluorescence Analysis #Physics #Ground state #Ionic bonding #Boron #Electron affinity (data page) #Ion #Atomic physics #Electron #Crystallography #Chemistry #Quantum mechanics #Molecule #Nuclear physics

paper · doi:10.1103/physrevlett.80.2562

openalex publication_date 1998/03/23 · openalex created_date 2025/10/10 · openalex updated_date 2026/06/26

Abstract

An investigation of the B^\ensuremath-(2p23PJ)\ensuremath→B(2p2P_J^\ensuremath') photodetachment thresholds using a tunable infrared laser source has yielded a substantially improved value for the electron affinity of boron and the first experimental data on the fine structure of the ionic ground state. The J\phantom\rule0ex0ex=\phantom\rule0ex0ex0--1 and J\phantom\rule0ex0ex=\phantom\rule0ex0ex1--2 splittings are found to be 3.23(15)cm^\ensuremath-1 and 5.18(15)cm^\ensuremath-1, respectively, and the electron affinity is determined to be 2256.12(20)cm^\ensuremath-1 [(279.723(25) meV]. The present result for the electron affinity is the first to challenge the extensive and controversial theoretical studies of this system.

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