2020/08/31 by Bo Chen, Fucong Fei, Dinghui Wang +13
Materials Science · Physics and Astronomy · #Advanced Condensed Matter Physics #Condensed matter physics #Electrical engineering #Ferromagnetism #Graphene research and applications #Magnetic field #Magnetism #Materials science #Physics #Quantum Hall effect #Quantum anomalous Hall effect #Quantum mechanics #Topological Materials and Phenomena #Topological insulator #Topology (electrical circuits) #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.104.075134
published as Phys. Rev. B 104, 075134 (2021)
arxiv created 2020/08/31 · openalex created_date 2020/09/11 · openalex publication_date 2021/08/18 · arxiv updated 2021/08/25 · openalex updated_date 2026/08/05
Intrinsic magnetic topological insulators (MTIs) MnBi2Te4 and MnBi2Te4/(Bi2Te3)n are expected to realize the high-temperature quantum anomalous Hall effect and dissipationless electrical transport. However, there is still a lack of ideal MTI candidates with magnetic ordering of the ferromagnetic (FM) ground state. Here, we show a MTI sample of Mn(Bi0.7Sb0.3)4Te7 which holds the coexistence of a FM behavior state and topological nontriviality. The dramatic modulation of the magnetism is induced by a charge carrier engineering process via the Sb substitution in the MnBi4Te7 matrix with antiferromagnetic ordering. The evolution of magnetism in Mn(Bi_1\ensuremath-xSbx)4Te7 is systematically investigated by our magnetic measurements and theoretical calculations. The clear topological surface states of the FM sample of Mn(Bi0.7Sb0.3)4Te7 are further verified by angle-resolved photoemission spectroscopy. The demonstration of the intrinsic FM-MTI of Mn(Bi0.7Sb0.3)4Te7 in this paper sheds light on further material optimization of intrinsic MTIs and paves the way for further studies to clarify the relationships between topology, magnetism, and charge carriers in topological materials.