Second harmonic generation of MoSi2N4-type layers

2020/09/15 by Lei Kang, Zheshuai Lin
Chemistry · Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Acoustic Wave Resonator Technologies #Chemistry #Condensed matter physics #Crystallography #Materials science #Optics #Perovskite Materials and Applications #Physics #Second-harmonic generation #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.103.195404

published as Phys. Rev. B 103, 195404 (2021) · 7 pages, 4 figures

arxiv created 2020/09/15 · openalex created_date 2020/09/21 · openalex publication_date 2021/05/05 · arxiv updated 2021/05/12 · openalex updated_date 2026/08/05

Abstract

The recently discovered two-dimensional (2D) layered semiconductor MoSi₂N₄ has aroused great interest due to its unique 2D material characteristics. In this study, we found that differences in the structural details for MoSi₂N₄ may lead to differences in the intensity of second harmonic generation (SHG) and its response to strain. Accordingly, SHG can be used as a simple technique to identify the structural details of this system. We further calculated the SHG effects of MoSi₂N₄ derivatives and investigated their strain-regulation mechanism, especially including the anomalous SHG responses under strain for MoSi₂P₄ and MoGe₂P₄, differing from other known 2D materials. The studies may have forward-looking significance for the research of nonlinear optics and optoelectronics in this novel 2D material system.

Citations

• Generalized Gradient Approximation Made Simple
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