Few-Electron Single and Double Quantum Dots in an InAs Two-Dimensional Electron Gas

2020/11/27 by Christopher Mittag, Jonne V. Koski, Matija Karalic +8 · 11 citations
Physics and Astronomy · #Gallium arsenide #Indium #Indium arsenide #Quantum #Quantum and electron transport phenomena #Quantum dot #Quantum dot laser #Quantum point contact #Semiconductor Quantum Structures and Devices #Topological Materials and Phenomena #cond-mat.mes-hall

paper · pdf · doi:10.1103/prxquantum.2.010321

published in PRX Quantum 2(1) (American Physical Society)

arxiv created 2020/11/27 · openalex created_date 2020/12/07 · openalex publication_date 2021/02/09 · arxiv updated 2021/02/17 · openalex updated_date 2026/08/05

Abstract

Important challenges for successfully adopting indium arsenide quantum dots as a platform for quantum devices are solved, bringing in new competitive advantages to the realm of semiconductor technologies.

Citations

• Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices
• Suppression of Spin Relaxation in an InAs Nanowire Double Quantum Dot
• Spin-Orbit Coupling Effects in Zinc Blende Structures
• Spin-state mixing in InAs double quantum dots
• Zero-field spin splitting in InAs-AlSb quantum wells revisited
• Helical Liquids and Majorana Bound States in Quantum Wires
• Driven coherent oscillations of a single electron spin in a quantum dot
• Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots
• Spins in few-electron quantum dots
• Non-Abelian anyons and topological quantum computation
• Control and Detection of Singlet-Triplet Mixing in a Random Nuclear Field
• Unpaired Majorana fermions in quantum wires
• Passivation of edge states in etched InAs sidewalls
• Fidelity benchmarks for two-qubit gates in silicon