1999/09/01 by S. Brosig, K. Ensslin, R. J. Warburton +4 · 2 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.60.r13989
published as Phys. Rev. B 60, R13989 (1999) · 4 pages, 3 figures, submitted to Phys. Rev. B
arxiv created 1999/09/01 · openalex publication_date 1999/11/15 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We present magnetotransport experiments on high-quality InAs-AlSb quantum wells that show a perfectly clean single-period Shubnikov--de Haas oscillation down to very low magnetic fields. In contrast to theoretical expectations based on an asymmetry induced zero-field spin splitting, no beating effect is observed. The carrier density has been changed by the persistent photoconductivity effect as well as via the application of hydrostatic pressure in order to influence the electric field at the interface of the electron gas. Still no indication of spin splitting at zero magnetic field was observed in spite of highly resolved Shubnikov--de Haas oscillations up to filling factors of 200. This surprising and unexpected result is discussed in view of other recently published data.