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Magnetotunneling between two-dimensional electron gases in InAs-AlSb-GaSb heterostructures

2003/04/03 by Y. Lin, Youxi Lin, E. M. González +6
Physics and Astronomy · #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.68.035311

published as Phys. Rev. B 68, p.035311 (July, 2003) · RevTeX format including 4 figures; submit for publication

arxiv created 2003/04/03 · openalex publication_date 2003/07/11 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We have observed that the tunneling magnetoconductance between two-dimensional (2D) electron gases, formed at nominally identical InAs-AlSb interfaces, most often exhibits two sets of Shubnikov--de Haas oscillations with almost the same frequency. This result is explained quantitatively with a model of the conductance in which the 2D gases have different densities and can tunnel between Landau levels with different quantum indices. When the epitaxial growth conditions of the interfaces are optimized, the zero-bias magnetoconductance shows a single set of oscillations, thus proving that the asymmetry between the two electron gases can be eliminated.

Citations