2020/01/31 by Bivas Dutta, B. Dutta, Danial Majidi +7 · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Biasing #Charge (physics) #Condensed matter physics #Coulomb #Coulomb blockade #Coupling (piping) #Degeneracy (biology) #Diamond #Electron #Heat flow #Heat transfer #Materials science #Physics #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #Quantum point contact #Quantum tunnelling #Quantum well #Semiconductor Quantum Structures and Devices #Thermal #Thermodynamics #Transistor #Voltage #cond-mat.mes-hall #quant-ph
paper · pdf · doi:10.1103/physrevlett.125.237701
published as Phys. Rev. Lett. 125, 237701 (2020) · 11 pages, 11 figures, to appear in Phys. Rev. Lett
arxiv created 2020/10/29 · openalex publication_date 2020/12/02 · arxiv updated 2020/12/22 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We demonstrate gate control of electronic heat flow in a thermally biased single-quantum-dot junction. Electron temperature maps taken in the immediate vicinity of the junction, as a function of the gate and bias voltages applied to the device, reveal clearly defined Coulomb diamond patterns that indicate a maximum heat transfer at the charge degeneracy point. The nontrivial bias and gate dependence of this heat valve results from the quantum nature of the dot at the heart of device and its strong coupling to leads.