Half-Metal–Spin-Gapless-Semiconductor Junctions as a Route to the Ideal Diode

2020/07/27 by E. Şaşıoğlu, T. Aull, Dorothea Kutschabsky +5
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Condensed matter physics #Diode #Dissipation #Electron #Gapless playback #Magnetic properties of thin films #Materials science #Ohmic contact #Optoelectronics #Physics #Quantum and electron transport phenomena #Quantum mechanics #Semiconductor #Spin (aerodynamics) #Voltage #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevapplied.14.014082

published as Phys. Rev. Applied 14, 014082 (2020) · 12 pages, 9 figures

openalex publication_date 2020/07/27 · openalex created_date 2020/08/03 · arxiv created 2020/09/22 · arxiv updated 2020/09/25 · openalex updated_date 2026/08/05

Abstract

Conventional semiconductor diodes have a junction barrier, and thus a threshold voltage, which gives rise to heat dissipation. The authors propose a diode concept based on half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). The HMM-SGS junction does not have a barrier and behaves like an Ohmic contact under forward bias, while for reverse bias the current is blocked by spin-dependent filtering of the electrons. Thus the proposed diode exhibits a threshold voltage of zero, linear I\ensuremath-V characteristics, and much higher current-drive capability. The authors provide a detailed description of the concept and give proof of principle by quantum transport calculations.

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