2018/01/22 by Krishna Murali, Medha Dandu, Sarthak Das +1 · 73 citations
Materials Science · Physics and Astronomy · #2D Materials and Applications #Backward diode #Diode #Electrical engineering #Graphene research and applications #Heterojunction #MXene and MAX Phase Materials #Materials science #Optoelectronics #Rectification #Schottky diode #Semiconductor #Voltage #cond-mat.mes-hall #cond-mat.mtrl-sci #physics.app-ph
paper · pdf · doi:10.1021/acsami.7b18242
published in ACS Applied Materials & Interfaces 10(6), 5657-5664 (American Chemical Society) · ACS Applied Materials & Interfaces, 2018
openalex publication_date 2018/01/22 · arxiv created 2018/02/02 · arxiv updated 2018/02/15 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Backward diodes conduct more efficiently in the reverse bias than in the forward bias, providing superior high-frequency response, temperature stability, radiation hardness, and 1/ f noise performance than a conventional diode conducting in the forward direction. Here, we demonstrate a van der Waals material-based backward diode by exploiting the giant staggered band offsets of WSe 2 /SnSe 2 vertical heterojunction. The diode exhibits an ultrahigh-reverse rectification ratio ( R ) of ∼2.1 × 10 4, and the same is maintained up to an unusually large bias of 1.5 V—outperforming existing backward diode reports using conventional bulk semiconductors as well as one- and two-dimensional materials by more than an order of magnitude while maintaining an impressive curvature coefficient (γ) of ∼37 V –1 . The transport mechanism in the diode is shown to be efficiently tunable by external gate and drain bias, as well as by the thickness of the WSe 2 layer and the type of metal contacts used. These results pave the way for practical electronic circuit applications using two-dimensional materials and their heterojunctions.