2020/02/03 by Bowen Zhou, Kenji Watanabe, Takashi Taniguchi +2
Engineering · Materials Science · Physics and Astronomy · #Condensed matter physics #Graphene #Graphene research and applications #Hexagonal boron nitride #Magnetic field #Magnetoresistance #Materials science #Molecular Junctions and Nanostructures #Monolayer #Nanotechnology #Optoelectronics #Physics #Quantum and electron transport phenomena #Semiconductor #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.5142021
published as Appl. Phys. Lett. 116, 053102 (2020)
openalex publication_date 2020/02/03 · arxiv created 2020/02/04 · arxiv updated 2020/02/05 · openalex created_date 2020/07/23 · openalex updated_date 2026/08/06
We report a proof-of-concept study of extraordinary magnetoresistance (EMR) in devices of monolayer graphene encapsulated in hexagonal boron nitride having metallic edge contacts and a central metal shunt. Extremely large EMR values, MR=(R(B)−R0)/R0∼105, are achieved in part because R0 approaches or crosses zero as a function of the gate voltage, exceeding that achieved in high mobility bulk semiconductor devices. We highlight the sensitivity, dR/dB, which in two-terminal measurements is the highest yet reported for EMR devices and in particular exceeds previous results in graphene-based devices by a factor of 20. An asymmetry in the zero-field transport is traced to the presence of pn-junctions at the graphene-metal shunt interface.