Physics-Based Compact Modeling of Double-Gate Graphene Field-Effect Transistor Operation Including Description of Two Saturation Modes

2011/10/28 by Gennady I. Zebrev, Zebrev, Gennady I., Alexander A. Tselykovskiy +3
Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.1110.6319

4 pages, 4 figures, a report to MIEL 2012

openalex publication_date 2011/10/28 · arxiv created 2012/02/02 · arxiv updated 2012/02/03 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Based on diffusion-drift approximation a version of analytic compact model for large-area double-gate graphene field-effect transistor is presented. As parts of the model, the electrostatics of double-gate structure is described and a unified phenomenological approach for modeling of the two drain current saturation modes is proposed.

Citations

• Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels

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