Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels

2010/05/01 by S. A. Thiele, J. A. Schaefer, F. Schwierz +1 · 6 citations
Materials Science · Physics and Astronomy · Engineering · #Graphene research and applications #Quantum and electron transport phenomena #Advancements in Battery Materials

paper · doi:10.1063/1.3357398

Abstract

A quasianalytical modeling approach for graphene metal-oxide-semiconductor field-effect transistors (MOSFETs) with gapless large-area graphene channels is presented. The model allows the calculation of the I-V characteristics, the small-signal behavior, and the cutoff frequency of graphene MOSFETs. It applies a correct formulation of the density of states in large-area graphene to calculate the carrier-density-dependent quantum capacitance, a steady-state velocity-field characteristics with soft saturation to describe the carrier transport, and takes the source/drain series resistances into account. The modeled drain currents and transconductances show very good agreement with experimental data taken from the literature Meric et al., [Nat. Nanotechnol. 3, 654 (2008)] and Kedzierski et al., [IEEE Electron Device Lett. 30, 745 (2009)]. In particular, the model properly reproduces the peculiar saturation behavior of graphene MOSFETs with gapless channels.

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