vix.ing · top · new · best · stats

Direct Proof of a Defect-Modulated Gap Transition in Semiconducting Nanotubes

2017/09/12 by Ryosuke Senga, Thomas Pichler, Yohei Yomogida +3 · 19 citations
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Atomic electron transition #Band gap #Carbon Nanotubes in Composites #Carbon nanotube #Characterization (materials science) #Chemistry #Condensed matter physics #Electron #Excitation #Exciton #Graphene research and applications #Materials science #Molecular physics #Nanotechnology #Nanowire Synthesis and Applications #Optical conductivity #Optoelectronics #Phonon #Physics #Semiconductor #Spectral line #cond-mat.mtrl-sci

paper · pdf · doi:10.1021/acs.nanolett.8b01284

published in Nano Letters 18(6), 3920-3925 (American Chemical Society)

arxiv created 2017/09/12 · openalex publication_date 2018/05/22 · arxiv updated 2018/12/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06

Abstract

Measurements of optical properties at a nanometer level are of central importance for the characterization of optoelectronic devices. It is, however, difficult to use conventional light-probe measurements to determine the local optical properties from a single quantum object with nanometrical inhomogeneity. Here, we successfully measured the optical gap transitions of an individual semiconducting carbon nanotube with defects by using a monochromated electron source as a probe. The optical conductivity extracted from an electron energy-loss spectrum for a certain type of defect presents a characteristic modification near the lowest excitation peak ( E 11 ), where excitons and nonradiative transitions, as well as phonon-coupled excitations, are strongly involved. Detailed line-shape analysis of the E 11 peak clearly shows different degrees of exciton lifetime shortening and electronic state modification according to the defect type.

Citations