2018/05/12 by Péter Udvarhelyi, Adam Gali · 34 citations
Engineering · Materials Science · Physics and Astronomy · #Advanced Surface Polishing Techniques #Boron and Carbon Nanomaterials Research #Coupling (piping) #Crystal (programming language) #Crystallographic defect #Diamond and Carbon-based Materials Research #Quantum #Quantum dot #Qubit #Silicon #Stress (linguistics) #Wafer #cond-mat.mtrl-sci #quant-ph
paper · pdf · doi:10.1103/physrevapplied.10.054010
published in Physical Review Applied 10(5) (American Physical Society) · 5 pages, 2 figures
arxiv created 2018/05/12 · openalex created_date 2018/05/17 · openalex publication_date 2018/11/05 · arxiv updated 2018/11/14 · openalex updated_date 2026/08/05
In the realm of solid-state qubits, the strength of the coupling of a point defect's spin to the local strain of its host crystal is important for developing a nanoscale quantum sensor. The authors use density functional theory to calculate the key parameters for a divacancy in SiC, and predict the stress sensitivity that could be achieved, which is competitive with that of an N-V center in diamond. This result highlights the potential for defect qubits in SiC, which has advantages in crystal growth and microfabrication techniques at wafer scale that point to integrated, all-silicon-based chip sensors.