2017/01/01 by Hui Wang, Di Lu, D. Lu +8 · 6 citations
Chemistry · Materials Science · Physics and Astronomy · #Band gap #Boron #Boron nitride #Chemistry #Computational chemistry #Condensed matter physics #Crystallography #Density functional theory #Electronic and Structural Properties of Oxides #Graphene #Graphene research and applications #Hexagonal boron nitride #Hexagonal crystal system #Honeycomb #Honeycomb structure #Layer (electronics) #Materials science #Monolayer #Nanotechnology #Nitride #Optoelectronics #Physics #Spin (aerodynamics) #Substrate (aquarium) #Topological Materials and Phenomena #Topological insulator #cond-mat.mtrl-sci
paper · pdf · doi:10.1039/c7nr00631d
published in Nanoscale 9(9), 2974-2980 (Royal Society of Chemistry)
openalex publication_date 2017/01/01 · arxiv created 2017/01/26 · arxiv updated 2018/10/12 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Topological insulators hold great potential for efficient information processing and storage. Using density functional theory calculations, we predict that a honeycomb lead monolayer can be stabilized on an Al2O3 (0001) substrate to become topologically non-trivial with a sizeable band gap (∼0.27 eV). Furthermore, we propose to use a hexagonal boron-nitride (h-BN) monolayer as a protection for the topological states of Pb/Al2O3 and Sn/Al2O3. Our findings suggest new possibilities for designing and protecting two-dimensional TIs for practical applications.