Evidence for Helical Edge Modes in InvertedInAs/GaSbQuantum Wells

2011/05/01 by Ivan Knez, Rui-Rui Du, Gerard Sullivan · 8 citations
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Computer science #Condensed matter physics #Conductance #Conduction band #Electron #Enhanced Data Rates for GSM Evolution #Materials science #Physics #Quantum and electron transport phenomena #Quantum mechanics #Telecommunications #Topological Materials and Phenomena #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevlett.107.136603

4 pages, 4 figures

arxiv created 2011/05/01 · openalex publication_date 2011/09/19 · arxiv updated 2015/05/28 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We present an experimental study of low temperature electronic transport in the hybridization gap of inverted InAs/GaSb composite quantum wells. An electrostatic gate is used to push the Fermi level into the gap regime, where the conductance as a function of sample length and width is measured. Our analysis shows strong evidence for the existence of helical edge modes proposed by Liu et al [Phys. Rev. Lett. 100, 236601 (2008)]. Edge modes persist in spite of sizable bulk conduction and show only a weak magnetic field dependence-a direct consequence of a gap opening away from the zone center.

Citations

• Quantum Spin Hall Effect in Graphene
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Scaling Theory of Localization: Absence of Quantum Diffusion in Two Dimensions
• Topological Insulators

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