2017/12/31 by J. X. Gong, Ji-Xiang Gong, Jun Yang +21
Materials Science · Physics and Astronomy · #2D Materials and Applications #Advanced Thermoelectric Materials and Devices #Colossal magnetoresistance #Electrical resistivity and conductivity #Electron #Hall effect #Magnetoresistance #Residual resistivity #Semimetal #Topological Materials and Phenomena #Weyl semimetal #cond-mat.mtrl-sci
paper · pdf · doi:10.1088/0256-307x/35/9/097101
published as Chin. Phys. Lett. 35, 097101 (2018)
openalex created_date 2018/01/05 · arxiv created 2018/04/30 · arxiv updated 2018/08/07 · openalex publication_date 2018/09/01 · openalex updated_date 2026/08/06
Non-stoichiometry effect on the extreme magnetoresistance is systematically investigated for the Weyl semimetal WTe 2 . Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fits to a two-band model show that the magnetoresistance is strongly dependent on the residual resistivity ratio (i.e., the degree of non-stoichiometry), which is eventually understood in terms of electron doping that not only breaks the balance between electron-type and hole-type carrier densities, but also reduces the average carrier mobility. Thus the compensation effect and ultrahigh mobility are probably the main driving force of the extreme magnetoresistance in WTe 2 .