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Breakdown of compensation and persistence of nonsaturating magnetoresistance in gatedWTe2thin flakes

2015/09/11 by Yilin Wang, Kefeng Wang, Janice Reutt‐Robey +3 · 3 citations
Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Engineering #MXene and MAX Phase Materials #Persistence (discontinuity) #Topological Materials and Phenomena #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.93.121108

published as Phys. Rev. B 93, 121108(R) (2016)

arxiv created 2015/09/11 · openalex publication_date 2016/03/22 · arxiv updated 2016/04/18 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

The recently discovered large nonsaturating magnetoresistance in semimetal WTe2 may result from near-perfect electron-hole compensation, however recent reports question whether the compensation is adequate to explain the observations. Experiments on significantly uncompensated WTe2 are needed. We measure magnetoresistance \ensuremathρxx(H), Hall effect \ensuremathρxy(H), and an electrolyte gating effect in thin (100 nm) exfoliated WTe2. We observe \ensuremathρxy(H) linear in H at low H consistent with near-perfect compensation, however \ensuremathρxy(H) becomes nonlinear and changes sign with increasing H, implying a breakdown of compensation. We break compensation more significantly by using an electrolytic gate for highly electron-doped WTe2 with Li. In gated WTe2 the nonsaturating \ensuremathρxx(H) persists to H=14\phantom\rule0.16em0exT, even with significant deviation from perfect electron-hole compensation (p/n=0.84) where the two-band model predicts a saturating \ensuremathρxx(H). Our results indicate electron-hole compensation is not the mechanism for extremely large magnetoresistance in WTe2; alternative explanations are needed.

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