2017/02/03 by J. C. Abadillo-Uriel, M. J. Calderón
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Condensed matter physics #Electric field #Electron #Physics #Quantum #Quantum and electron transport phenomena #Quantum mechanics #Quantum well #Quantum-confined Stark effect #Qubit #Semiconductor Quantum Structures and Devices #Spin (aerodynamics) #Spin engineering #Spin polarization #Stark effect #cond-mat.mes-hall
paper · pdf · doi:10.1088/1367-2630/aa695f
published as New Journal of Physics 19(4), 043027, (2017) · 10 pages, 8 figures
arxiv created 2017/02/03 · openalex publication_date 2017/03/27 · arxiv updated 2018/03/02 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
The large spin–orbit coupling in the valence band of group IV semiconductors provides an electric field knob for spin-qubit manipulation. This fact can be exploited with acceptor based qubits. Spin manipulation of holes bound to acceptors in engineered SiGe quantum wells depends very strongly on the electric field applied and on the heterostructure parameters. The g -factor is enhanced by the Ge content and can be tuned by shifting the hole wave-function between the heterostructure constituent layers. The lack of inversion symmetry induced both by the quantum well and the electric fields together with the g -factor tunability allows the possibility of different qubit manipulation methods such as electron spin resonance, electric dipole spin resonance and g -tensor modulation resonance. Rabi frequencies up to hundreds of MHz can be achieved by electric field manipulation of heavy-hole qubits, and of the order of GHz with light-hole qubits.