vix.ing · top · new · best · stats

Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET

2015/11/24 by B. Voisin, R. Maurand, Romain Maurand +8 · 88 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Atomic physics #Condensed matter physics #Field-effect transistor #Hyperfine structure #MOSFET #Materials science #Nanowire #Optoelectronics #Physics #Physics of Superconductivity and Magnetism #Quantum #Quantum and electron transport phenomena #Quantum computer #Quantum dot #Quantum mechanics #Qubit #Silicon #Silicon on insulator #Spin (aerodynamics) #Spins #Transistor #Voltage #cond-mat.mes-hall

paper · pdf · doi:10.1021/acs.nanolett.5b02920

published in Nano Letters 16(1), 88-92 (American Chemical Society) · 15 pages, 3 figures

openalex publication_date 2015/11/24 · arxiv created 2015/11/25 · arxiv updated 2015/12/15 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole quantum dot. A detailed magnetotransport study of the first accessible hole reveals a g-factor with unexpectedly strong anisotropy and gate dependence. We infer that these two characteristics could enable an electrically driven g-tensor-modulation spin resonance with Rabi frequencies exceeding several hundred mega-Hertz.

Citations

Cited by