2017/03/31 by Kuang-Chung Wang, Teodor K. Stanev, Daniel Valencia +14 · 29 citations
Chemistry · Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Chemistry #Condensed matter physics #Coupling (piping) #Electron #Exciton #Fermi level #MXene and MAX Phase Materials #Materials science #Monolayer #Nanotechnology #Optoelectronics #Perovskite Materials and Applications #Photoluminescence #Physics #Quantum mechanics #Spin (aerodynamics) #Transition metal #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.5005958
published in Journal of Applied Physics 122(22) (American Institute of Physics) · 11 pages, 15 figures
arxiv created 2017/09/15 · openalex publication_date 2017/12/11 · openalex created_date 2017/12/22 · arxiv updated 2018/01/17 · openalex updated_date 2026/08/05
It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers—depending on the balance between spin-orbit interaction and interlayer hopping. This balance depends on the layer thickness, momentum space symmetry points, and applied gate fields. The design range of this balance, the effective Fermi levels, and all relevant effective masses is analyzed in great detail. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as the major source for the observed photoluminescence.