2016/07/14 by Fan W. Chen, Hesameddin Ilatikhameneh, Tarek A. Ameen +2 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Advancements in Semiconductor Devices and Circuit Design #Field-effect transistor #Homojunction #Layer (electronics) #Phosphorene #Quantum tunnelling #Scaling #Semiconductor Quantum Structures and Devices #Transistor #cond-mat.mes-hall
paper · pdf · doi:10.1109/led.2016.2627538
6 figures
arxiv created 2016/07/14 · openalex created_date 2016/08/23 · openalex publication_date 2016/11/10 · arxiv updated 2017/03/08 · openalex updated_date 2026/08/05
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high-performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2-D materials: layer thickness-dependent energy bandgaps (Eg). Unlike the conventional hetero-junction TFETs, TE-TFET uses spatially varying layer thickness to form a hetero-junction. This offers advantages by avoiding the lattice mismatch problems at the interface. Furthermore, it boosts the ON-current to 1280 μA/μm with 15-nm channel length. Providing higher ON currents, phosphorene TE-TFET outperforms the homojunction phosphorene and the TMD TFETs in terms of extrinsic energy-delay product. TE-TFET also scales well to 9 nm with constant field scaling E = VDD/Lch= 33 mV/nm. In this letter, the operation principles of TE-TFET and its performance sensitivity to the design parameters are investigated through full-band atomistic quantum transport simulations.