2017/03/31 by S. U. Piatrusha, Stanislau U. Piatrusha, V. S. Khrapai +5 · 10 citations
Materials Science · Mathematics · Physics and Astronomy · #Algorithm #Artificial intelligence #Combinatorics #Computer science #Condensed matter physics #Electronic and Structural Properties of Oxides #Enhanced Data Rates for GSM Evolution #Geometry #Graphene research and applications #Image (mathematics) #Interpretation (philosophy) #Mathematics #Noise (video) #Order (exchange) #Physics #Relaxation (psychology) #Topological Materials and Phenomena #Topology (electrical circuits) #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.96.245417
published in Physical review. B./Physical review. B 96(24) (American Physical Society)
arxiv created 2017/10/24 · openalex publication_date 2017/12/20 · arxiv updated 2017/12/22 · openalex created_date 2018/01/05 · openalex updated_date 2026/08/05
We investigate lateral p\ensuremath-n junctions, electrostatically defined in 14-nm-wide HgTe-based quantum wells (QWs) with inverted band structure. The p\ensuremath-n junction resistances are close to h/2e2, consistent with some previous experiments on 8--10\phantom\rule0.28em0exnm QWs, and the current-voltage characteristics are highly linear, indicating the transport via ballistic helical edge states. Shot noise measurements are performed in order to further verify the underlying transport mechanism. We discuss the role of unknown inelastic relaxation rates in the leads and in the edge channels for the correct interpretation of the noise data. Although the interpretation in favor of the helical edge states seems more consistent, a definite conclusion cannot be drawn based on the present experiment. Our approach looks promising for the study of short quasiballistic edges in topological insulators in suitable geometry.