Wurtzite (Ga,Mn)As nanowire shells with ferromagnetic properties

2016/12/28 by J. Sadowski, S. Kret, A. Šiušys +9 · 18 citations
Materials Science · Physics and Astronomy · #Condensed matter physics #Ferromagnetic material properties #Ferromagnetism #GaN-based semiconductor devices and materials #Magnetic field #Magnetization #Manganese #Materials science #Metallurgy #Nanotechnology #Nanowire #Physics #Quantum mechanics #Semiconductor materials and interfaces #Wurtzite crystal structure #Zinc #ZnO doping and properties #cond-mat.mtrl-sci

paper · pdf · doi:10.1039/c6nr08070g

published in Nanoscale 9(6), 2129-2137 (Royal Society of Chemistry) · 13 pages, 7 figures

openalex publication_date 2016/12/28 · arxiv created 2017/12/15 · arxiv updated 2017/12/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

(Ga,Mn)As having a wurtzite crystal structure was coherently grown by molecular beam epitaxy on the 1100 side facets of wurtzite (Ga,In)As nanowires and further encapsulated by (Ga,Al)As and low temperature GaAs. For the first time, a truly long-range ferromagnetic magnetic order is observed in non-planar (Ga,Mn)As, which is attributed to a more effective hole confinement in the shell containing Mn by the proper selection/choice of both the core and outer shell materials.

Citations

• Capping-induced suppression of annealing effects on Ga1−xMnxAs epilayers
• Generalized Gradient Approximation Made Simple
• Weak Localization in Ferromagnetic (Ga,Mn)As Nanostructures
• Silicon spin communication
• Mn Interstitial Diffusion in(Ga,Mn)As
• All-Wurtzite (In,Ga)As-(Ga,Mn)As Core–Shell Nanowires Grown by Molecular Beam Epitaxy
• Experimental probing of the interplay between ferromagnetism and localization in (Ga, Mn)As