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Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor

2016/10/25 by A. Kononov, S. V. Egorov, С. В. Егоров +9
Chemistry · Physics and Astronomy · #Bilayer #Charge (physics) #Chemistry #Condensed matter physics #Electron #Enhanced Data Rates for GSM Evolution #Layer (electronics) #Magnetic field #Materials science #Nanotechnology #Niobium #Physics #Physics of Superconductivity and Magnetism #Plane (geometry) #Proximity effect (electron beam lithography) #Quantum and electron transport phenomena #Solid-state physics #Superconductivity #Topological Materials and Phenomena #cond-mat.mes-hall #cond-mat.supr-con

paper · pdf · doi:10.1134/s0021364017080057

published in Journal of Experimental and Theoretical Physics Letters 105(8), 508-513 (Pleiades Publishing) · 5 pages

arxiv created 2016/10/25 · openalex created_date 2016/11/04 · openalex publication_date 2017/04/01 · arxiv updated 2017/10/30 · openalex updated_date 2026/08/05

Abstract

We investigate charge transport through the junction between a niobium superconductor and the edge of a two-dimensional electron-hole bilayer, realized in an InAs/GaSb double quantum well. For the transparent interface with a superconductor, we demonstrate that the junction resistance is determined by the interlayer charge transfer near the interface. From an analysis of experimental I−V curves, we conclude that the proximity-induced superconductivity efficiently couples electron and hole layers at low currents. The critical current demonstrates periodic dependence on the in-plane magnetic field, while it is monotonic for the field that is normal to the bilayer plane.

Citations