2017/01/01 by José Silva, J. P. B. Silva, Carolina A. Marques +3
Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Advanced Memory and Neural Computing #Dielectric #Electrical engineering #Electrode #Electroforming #Ferroelectricity #Layer (electronics) #Materials science #Nanotechnology #Optoelectronics #Perovskite Materials and Applications #Polarization (electrochemistry) #Resistive random-access memory #Resistive touchscreen #physics.app-ph
paper · pdf · doi:10.1039/c7tc03024j
published as J. Mater. Chem. C, 2017,5, 10353-10359
openalex publication_date 2017/01/01 · arxiv created 2017/05/12 · openalex created_date 2017/10/06 · arxiv updated 2017/10/26 · openalex updated_date 2026/08/05
Here we study the resistive switching (RS) effect that emerges when ferroelectric BaTiO <sub>3</sub> (BTO) and few-layer MoSe <sub>2</sub> are combined in a single structure.