2017/04/18 by Woong-Jhae Lee, Woong‐Jhae Lee, Hyung Joon Kim +5
Chemistry · Materials Science · Physics and Astronomy · #Advanced Condensed Matter Physics #Chemistry #Diode #Doping #Electrical engineering #Electron mobility #Electronic and Structural Properties of Oxides #Engineering physics #Field-effect transistor #Magnetic and transport properties of perovskites and related materials #Materials science #Nanotechnology #Optoelectronics #Perovskite (structure) #Physics #Semiconductor #Stannate #Transistor #cond-mat.mtrl-sci
paper · pdf · doi:10.1146/annurev-matsci-070616-124109
published as Annual Review of Materials Research 47, 391 (2017) · 70 pages, 14 figures, 1 table
openalex publication_date 2017/04/18 · arxiv created 2017/07/31 · arxiv updated 2017/08/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Transparent conducting oxides (TCOs) and transparent oxide semiconductors (TOSs) have become necessary materials for a variety of applications in the information and energy technologies, ranging from transparent electrodes to active electronics components. Perovskite barium stannate (BaSnO 3 ), a new TCO or TOS system, is a potential platform for realizing optoelectronic devices and observing novel electronic quantum states due to its high electron mobility, excellent thermal stability, high transparency, structural versatility, and flexible doping controllability. This article reviews recent progress in the doped BaSnO 3 system, discussing the wide range of physical properties, electron-scattering mechanism, and demonstration of key semiconducting devices such as pn diodes and field-effect transistors. Moreover, we discuss the pathways to achieving two-dimensional electron gases at the interface between BaSnO 3 and other perovskite oxides and describe remaining challenges for observing novel quantum phenomena at the heterointerface.