The Interpretation of the Properties of Indium Antimonide

1954/10/01 by T. S. Moss, T S Moss · 10 citations
Engineering · Materials Science · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Semiconductor Quantum Structures and Devices #ZnO doping and properties

paper · doi:10.1088/0370-1301/67/10/306

crossref issued 1954/10/01 · crossref published 1954/10/01 · crossref published-print 1954/10/01 · openalex publication_date 1954/10/01 · crossref published-online 2002/12/18 · crossref created 2002/12/19 · crossref deposited 2020/04/11 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/02 · crossref indexed 2026/08/07

Abstract

The data given on the optical properties of InSb are analysed and precise values for the position and temperature dependence of the absorption edge are given. The variation of the position of the absorption edge with impurity concentration is explained by the very low effective mass of the conduction electrons, which is estimated by three methods to be about 0.03 of the free electron mass.

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