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Distinct Electronic Structure for the Extreme Magnetoresistance in YSb

2016/07/26 by Junfeng He, Chaofan Zhang, Nirmal J. Ghimire +15 · 1 citation
Physics and Astronomy · #cond-mat.str-el #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevlett.117.267201

published as Phys. Rev. Lett. 117, 267201 (2016)

arxiv created 2016/07/26 · arxiv updated 2016/12/28

Abstract

An extreme magnetoresistance (XMR) has recently been observed in several non-magnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.

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