2016/02/10 by S. Molina-Valdovinos, Yu. G. Gurevich
Engineering · Materials Science · Physics and Astronomy · #Atomic physics #Charge (physics) #Charge carrier #Condensed matter physics #Electric field #Electron #Materials science #Nanotechnology #Non-equilibrium thermodynamics #Nonlinear system #Optoelectronics #Physics #Quantum mechanics #Semiconductor #Semiconductor device #Silicon Nanostructures and Photoluminescence #Silicon and Solar Cell Technologies #Thermodynamics #Thin-Film Transistor Technologies #Voltage #cond-mat.mtrl-sci
paper · pdf · doi:10.1016/j.physleta.2016.04.022
arxiv created 2016/02/10 · openalex publication_date 2016/04/30 · arxiv updated 2016/06/22 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
It is known that when strong electric field is applied to a semiconductor sample, the current voltage characteristic deviates from the linear response. In this letter, we propose a new point of view of nonlinearity in semiconductors which is associated with the electron temperature dependence on the recombination rate. The heating of the charge carriers breaks the balance between generation and recombination, giving rise to nonequilibrium charge carriers concentration and nonlinearity.