2004/01/13 by I. N. Volovichev, G. N. Logvinov, O. Yu. Titov +1 · 1 citation
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Advanced Materials and Semiconductor Technologies #Atomic physics #Carrier generation and recombination #Charge carrier #Chemistry #Condensed matter physics #Electron #Electron hole #Non-equilibrium thermodynamics #Optoelectronics #Physics #Quantum mechanics #Recombination #Recombination rate #Semiconductor #Spontaneous emission #Thermal properties of materials #Thermography and Photoacoustic Techniques #cond-mat.soft
paper · pdf · doi:10.1063/1.1669074
8 pages, to be published in JAP
arxiv created 2004/01/13 · openalex publication_date 2004/03/25 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
In this Communication, it is shown that models used for describing generation and recombination of electrons and holes lead to disagreements with Maxwell’s electrodynamics. Self-consistent expressions, more adequately depicting the actual physical processes of electron-hole recombination in semiconductors are obtained. It is shown that the electron and hole lifetimes can be defined correctly only for the special cases when the electron and hole nonequilibrium concentrations are the same, these lifetimes being equal. The influence of temperature inhomogeneity on the recombination is also considered. The recombination rate for hot electrons is obtained in the case when the electron and hole temperatures differ.