1975/11/01 by T. H. P. Chang · 1 citation
Engineering · Materials Science · Mathematics · #Advancements in Photolithography Techniques #Algorithm #Cathode ray #Computation #Computational physics #Electron #Electron and X-Ray Spectroscopy Techniques #Electron-beam lithography #Geometry #Lithography #Materials science #Mathematics #Nanotechnology #Optical Coatings and Gratings #Optics #Photolithography #Physics #Point (geometry) #Proximity effect (electron beam lithography) #Quantum mechanics #Reciprocity (cultural anthropology) #Resist #Stencil lithography #X-ray lithography
paper · doi:10.1116/1.568515
crossref issued 1975/11/01 · crossref published 1975/11/01 · crossref published-print 1975/11/01 · openalex publication_date 1975/11/01 · crossref created 2002/07/27 · crossref deposited 2023/06/29 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/04 · crossref indexed 2026/08/04
A simple technique for the computation of the proximity effect in electron-beam lithography is presented. The calculations give results of the exposure intensity received at any given point in a pattern area using a reciprocity principle. Good agreement between the computed results and experimental data was achieved.