2005/12/30 by Bryan C. Gundrum, David G. Cahill, R. S. Averback · 1 citation
Materials Science · Engineering · #Thermal properties of materials #Composite Material Mechanics #Thermal Radiation and Cooling Technologies
paper · doi:10.1103/physrevb.72.245426
openalex publication_date 2005/12/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/06/28
The thermal conductance of interfaces between Al and Cu is measured in the temperature range 78<T<298\phantom\rule0.3em0exK using time-domain thermoreflectance. The samples are prepared by magnetron sputter deposition of a 100\phantom\rule0.3em0exnm thick film of Al on top of layers of Cu on sapphire substrates. The chemical abruptness of the Al-Cu interface is systematically varied by ion-beam mixing using 1\phantom\rule0.3em0exMeV Kr ions. The thermal conductance of the as-deposited Al-Cu interface is 4\phantom\rule0.3em0exGW\phantom\rule0.2em0exm^\ensuremath-2\phantom\rule0.2em0exK^\ensuremath-1 at room temperature, an order-of-magnitude larger than the phonon-mediated thermal conductance of typical metal-dielectric interfaces. The magnitude and the linear temperature dependence of the conductance are described well by a diffuse-mismatch model for electron transport at interfaces.