2003/02/27 by Ruxandra M. Costescu, Marcel A. Wall, David G. Cahill · 3 citations
Materials Science · Engineering · #Thermal properties of materials #Thermal Expansion and Ionic Conductivity #Electronic Packaging and Soldering Technologies
paper · doi:10.1103/physrevb.67.054302
openalex publication_date 2003/02/27 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/29
The thermal conductance of interfaces between epitaxial TiN and single crystal oxides is measured at temperatures between 79.4 and 294 K using time-domain thermoreflectance. The analysis method relies on the ratio of the in-phase and out-of-phase signals of the lock-in amplifier for more accurate data analysis. The validity of this approach is tested by measurements on 6.5, 11.8, and 25 nm thick thermally oxidized SiO2 on Si. The thermal conductances G of TiN/MgO(001), TiN/MgO(111), and TiN/Al2O3(0001) interfaces are essentially identical and in good agreement with the predictions of lattice dynamics models and the diffuse mismatch model with a four-atom fcc unit cell. Near room temperature, G\ensuremath≈700\phantom\rule0ex0exMWm^\ensuremath-2\phantom\rule0ex0exK^\ensuremath-1, \ensuremath≈5 times larger than the highest values reported previously for any individual interface.