2016/10/20 by Ha-Duong Ngo, Biswajit Mukhopadhyay, Piotr Mackowiak +3 · 2 citations
Engineering · Materials Science · #Silicon Carbide Semiconductor Technologies #Metal and Thin Film Mechanics #Copper Interconnects and Reliability
paper · pdf · doi:10.3390/mi7100193
openalex publication_date 2016/10/20 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30
In this paper, we present and discuss our new WSi⁻WSiN⁻Pt metallization scheme for SiC-based microsystems for applications in harsh environments. Stoichiometric material WSi was selected as contact material for SiC. The diffusion barrier material WSiN was deposited from the same target as the contact material in order to limit the number of different chemical elements in the scheme. Our scheme was kept as simple as possible regarding the number of layers and chemical elements. Our scheme shows very good long-term stability and suitability for SiC-based microsystems. The experimental evaluation concept used here includes a combination of physical, electrical, and mechanical analysis techniques. This combined advance is necessary since modern physical analysis techniques still offer only limited sensitivity for detecting minimal changes in the metallization scheme.