Structural analysis of Si(111)-7×7 by UHV-transmission electron diffraction and microscopy

1985/05/01 by K. Takayanagi, Y. Tanishiro, Masaetsu Takahashi +1 · 1,317 citations
Chemistry · Engineering · Physics and Astronomy · #Chemistry #Crystallography #Diffraction #Dislocation #Electron diffraction #Electron microscope #Integrated Circuits and Semiconductor Failure Analysis #Materials science #Molecular physics #Nanotechnology #Optics #Physics #Reflection high-energy electron diffraction #Silicon Carbide Semiconductor Technologies #Stacking #Stacking fault #Surface and Thin Film Phenomena #Transmission electron microscopy

paper · doi:10.1116/1.573160

published in Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 3(3), 1502-1506 (American Institute of Physics)

openalex publication_date 1985/05/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/25

Abstract

Structural analysis of the surface reconstructions investigated by ultrahigh vacuum (UHV) transmission electron microscopy (TEM) and diffraction (TED) is shown. By TED intensity analysis a new structural model of Si(111)-7×7 is derived. The model basically consists of 12 adatoms arranged locally in the 2×2 structure, nine dimers on the sides of the triangular subunits of the 7×7 unit cell and a stacking fault layer. UHV–HREM of Si (111)-7×7 surface is commented.

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