1996/01/01 by K.R. Williams, R.S. Muller · 2 citations
Engineering · #Advanced MEMS and NEMS Technologies #Semiconductor materials and devices #Advanced Surface Polishing Techniques
paper · doi:10.1109/84.546406
openalex publication_date 1996/01/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/29
The etch rates for 317 combinations of 16 materials (single-crystal silicon, doped, and undoped polysilicon, several types of silicon dioxide, stoichiometric and silicon-rich silicon nitride, aluminum, tungsten, titanium, Ti/W alloy, and two brands of positive photoresist) used in the fabrication of microelectromechanical systems and integrated circuits in 28 wet, plasma, and plasmaless-gas-phase etches (several HF solutions, H/sub 3/PO/sub 4/, HNO/sub 3/+H/sub 2/O+NH/sub 4/F, KOH, Type A aluminum etchant, H/sub 2/O+H/sub 2/O/sub 2/+HF, H/sub 2/O/sub 2/, piranha, acetone, HF vapor, XeF/sub 2/, and various combinations of SF/sub 6/, CF/sub 4/, CHF/sub 3/, Cl/sub 2/, O/sub 2/, N/sub 2/, and He in plasmas) were measured and are tabulated. Etch preparation, use, and chemical reactions (from the technical literature) are given. Sample preparation and MEMS applications are described for the materials.