2015/08/17 by D. Bischoff, Dominik Bischoff, Marius Eich +5 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Boron nitride #Condensed matter physics #Graphene #Graphene research and applications #Materials science #Nanotechnology #Physics #Quantum #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #Quantum tunnelling #Stacking #cond-mat.mes-hall #van der Waals force
paper · pdf · doi:10.1021/acs.nanolett.5b02167
published as Nano letters 15 (9), 6003-6008, 2015
openalex publication_date 2015/08/17 · arxiv created 2016/02/27 · arxiv updated 2016/03/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We present an electronic transport experiment in graphene where both classical and quantum mechanical charge detector back-action on a quantum dot are investigated. The device consists of two stacked graphene quantum dots separated by a thin layer of boron nitride. This device is fabricated by van der Waals stacking and is equipped with separate source and drain contacts to both dots. By applying a finite bias to one quantum dot, a current is induced in the other unbiased dot. We present an explanation of the observed measurement-induced current based on strong capacitive coupling and energy dependent tunneling barriers, breaking the spatial symmetry in the unbiased system. This is a special feature of graphene-based quantum devices. The experimental observation of transport in classically forbidden regimes is understood by considering higher-order quantum mechanical back-action mechanisms.