2016/01/26 by Kitakorn Jatiyanon, Bumned Soodchomshom · 4 citations
Materials Science · Mathematics · Physics and Astronomy · #2D Materials and Applications #Condensed matter physics #Graphene #Graphene research and applications #Lattice (music) #Mathematics #Physics #Quantum and electron transport phenomena #Quantum mechanics #Spin (aerodynamics) #Spontaneous symmetry breaking #Symmetry (geometry) #Symmetry breaking #cond-mat.mes-hall
paper · pdf · doi:10.1016/j.physe.2016.01.031
published in Physica E Low-dimensional Systems and Nanostructures 80, 120-124 (Elsevier BV) · 17 pages, 4 figures, typos"SW2" were replaced by"WS2"
openalex publication_date 2016/01/26 · arxiv created 2016/02/12 · arxiv updated 2016/02/15 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Strong spin-orbit interaction (SOI) in graphene grown on tungsten disulfide (WS2) has been recently observed, leading to energy gap opening by SOI. Energy gap in graphene may also be induced by sublattice symmetry breaking (SSB) where energy level in A-sublattice is not equal to that in B-sublattice. SSB-gap may be produced by growing graphene on hexagonal boron nitride or silicon carbide. In this work, we investigate transport property in a SOI/SSB/SOI gapped graphene junction, focusing the effect of interplay of SOI and SSB. We find that, lattice-pseudospin polarization (L-PSP) can be controlled perfectly from +100% to -100% by gate voltage. This is due to the fact that in graphene grown on WS2, the carriers carry lattice-pseudo spin degree of freedom "up and down". The SSB-gapped graphene exhibits pseudo-ferromagnetism to play the role of lattice-pseudospin filtering barrier. It is also found that the SOI and SSB-gaps in graphene may be measured by characteristic of L-PSP in the junction. The proposed controllable-lattice-pseudospin currents may be applicable for graphene-based pseudospintronics.