2008/01/14 by Takehito Yokoyama · 2 citations
Engineering · Materials Science · Physics and Astronomy · #Advancements in Battery Materials #Condensed matter physics #Ferromagnetism #Gate voltage #Graphene #Graphene research and applications #Materials science #Nanotechnology #Physics #Quantum and electron transport phenomena #Quantum mechanics #Spin (aerodynamics) #Spin polarization #Spintronics #Transistor #Voltage #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.77.073413
published as Phys. Rev. B 77, 073413 (2008) · 4 pages, 4 figures, accepted for publication in Phys. Rev. B
arxiv created 2008/01/14 · openalex publication_date 2008/02/29 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We study spin transport in normal/ferromagnetic/normal graphene junctions where a gate electrode is attached to the ferromagnetic graphene. We find that, due to the exchange field of the ferromagnetic graphene, spin current through the junctions has an oscillatory behavior with respect to the chemical potential in the ferromagnetic graphene, which can be tuned by the gate voltage. In particular, we obtain a spin current reversal controllable by the gate voltage. Our prediction of high controllability of spin transport in ferromagnetic graphene junctions may contribute to the development of spintronics.