2013/08/30 by Ling Tang, Yang Ze-Jin, Zejin Yang · 6 citations
Materials Science · Physics and Astronomy · #Coco #Computer science #Condensed matter physics #Ferromagnetism #Heusler alloys: electronic and magnetic properties #Lambda #Magnetic field #Magnetic properties of thin films #Magnetoresistance #Materials science #Mechanics #Physics #Quantum mechanics #Rotational symmetry #Semiconductor materials and interfaces #Spin (aerodynamics) #Spin valve #Spin wave #Spin-transfer torque #Thermodynamics #Torque #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.4831959
published in Journal of Applied Physics 114(19) (American Institute of Physics) · 7 pages, 6 figures
arxiv created 2013/08/30 · openalex publication_date 2013/11/18 · arxiv updated 2016/01/26 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
The spin-transfer torque (STT) in Co2MnSi(CMS)/Al/Co2MnSi spin-valve system with and without interfacial disorder is studied by a first-principles noncollinear wave-function-matching method. It is shown that in the case of clean interface the angular dependence of STT for CoCo/Al (the asymmetry parameter Λ≈4.5) is more skewed than that for MnSi/Al (Λ≈2.9), which suggests the clean CoCo/Al architecture is much more efficient for the application on radio frequency oscillation. We also find that even with interfacial disorder the spin-valve of half-metallic CMS still has a relatively large parameter Λ compared to that of conventional ferromagnet. In addition, for clean interface the in-plane torkance of MnSi/Al is about twice as large as that of CoCo/Al. However, as long as the degree of interfacial disorder is sufficiently large, the CoCo/Al and MnSi/Al will show approximately the same magnitude of in-plane torkance. Furthermore, our results demonstrate that CMS/Al/CMS system has very high efficiency of STT to switch the magnetic layer of spin-valve.