2015/03/31 by Florian Ong, Florian R. Ong, Zheng Cui +11
Materials Science · Physics and Astronomy · #Electrical engineering #Electrical resistivity and conductivity #Fabrication #Field-effect transistor #Graphene #Graphene nanoribbons #Graphene research and applications #Layer (electronics) #Materials science #Monolayer #Nanotechnology #Optoelectronics #Quantum and electron transport phenomena #Silicon #Substrate (aquarium) #Topological Materials and Phenomena #Transistor #Trench #Voltage #cond-mat.mes-hall
paper · pdf · doi:10.1088/0957-4484/26/40/405201
published as Nanotechnology, vol 26, p 405201 (2015)
openalex publication_date 2015/09/17 · arxiv created 2015/09/18 · arxiv updated 2015/09/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The devices are built on a bare high-resistivity silicon substrate. At temperatures of 77 K and below, we observe the field-effect modulation of the graphene resistivity by a voltage applied to the gate. This fabrication approach enables new experiments involving graphene-based superconducting qubits and nano-electromechanical resonators. The method is applicable to other two-dimensional materials.