High-frequency performance of graphene field effect transistors with saturating IV-characteristics

2011/12/13 by Inanc Meric, Cory R. Dean, Meric, I. +11
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena

paper · pdf · doi:10.48550/arxiv.1112.2777

openalex publication_date 2011/12/13 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax values as high as 34 GHz at 600-nm channel length. Bias dependence of fT and fmax and the effect of the ambipolar channel on transconductance and output resistance are also examined.

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