2017/05/18 by Yaohua Tan, Mirza M. Elahi, Tan, Yaohua +9
Engineering · Materials Science · #Advancements in Semiconductor Devices and Circuit Design #Applied Physics (physics.app-ph) #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.1705.08263
openalex publication_date 2017/05/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We propose Graphene Klein tunnel transistors (GKTFET) as a way to enforce current saturation while maintaining large mobility for high speed radio frequency (RF) applications. The GKTFET consists of a sequence of angled graphene p-n junctions (GPNJs). Klein tunneling creates a collimation of electrons across each GPNJ, so that the lack of substantial overlap between transmission lobes across successive junctions creates a gate-tunable transport gap without significantly compromising the on-current. Electron scattering at the device edge tends to bleed parasitic states into the gap, but the resulting pseudogap is still sufficient to create a saturated output (ID-VD) characteristic and a high output resistance. The modulated density of states generates a higher transconductance (gm) and unity current gain cut-off frequency (fT) than GFETs. More significantly the high output resistance makes the unity power gain cut-off frequency (fmax) of GKTFETs considerably larger than GFETs, making analog GKTFET potentially useful for RF electronics. Our estimation shows the fT/fmax of a GKTFET with 1 μm channel reaches 33 GHz/17 GHz, and scale up to 350 GHz/53 GHz for 100 nm channel (assuming a single, scalable trapezoidal gate). The fmax of a GKTFET is 10 times higher than a GFET with the same channel length.